S19  Usinagem dos Materiais
 
 Titulo:
SINGLE POINT DIAMOND TURNING OF POLYCRYSTALLINE SILICON
 
Resumo :
IN THIS WORK ,A POLYCRYSTALLINE SILICON SAMPLE WAS SINGLE POINT DIAMOND TURNED IN ORDER TO VERIFY IF THIS TECHNIQUE CAN BE USED AS A VIABLE OPTION FOR THE PRODUCTION OF ASPHERIC LENSES FOR THE INFRA RED (IR) REGION OF THE ELECTROMAGNETIC SPECTRUM. INTERRUPTED CUTS WERE MADE WITH FIXED DEPHT OF CUT VALUE OF 10 MM AND VARYING FEED-RATES FROM 2.5 MM/REV. UP TO 10MM/REV. THE UNCUT SHOULDER AND MACHINED SURFACE WERE ASSESSED USING SCANNING ELECTRON MICROSCOPY (SEM). THE RESULTS SHOW THAT, FOR FEED-RATE SMALLER THAN 4.0 MM/REV, THE DUCTILE MODE WAS ALWAYS OBTAINED. THIS MEAN A CRITICAL THICKNESS OF CUT OF 234 NM WHICH IS IN THE SAME ORDER OF THE VALUES FOR SINGLE CRYSTAL SILICON OBSERVED IN THE LITERATURE. 
 
Autores :
Duduch, Jaime Gilberto
Pagotto, Carlos Renato
 
 
Trabalho Completo :

 

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