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S19 Usinagem dos Materiais |
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Titulo:
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DUCTILE MODE CHIP REMOVAL IN ULTRAPRECISION DIAMOND TURNING OF MONOCRYSTALLINE SILICON
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Resumo :
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ULTRAPRECISION DIAMOND TURNING OF SINGLE CRYSTAL SEMICONDUCTOR IS AN IMPORTANT FIELD OF BRITTLE MATERIALS MACHINING RESEARCH. CONSIDERABLE PROGRESS HAS BEEN MADE IN THIS SECTOR SINCE IT WAS FOUND THAT BRITTLE MATERIALS COULD BE MACHINED IN THE DUCTILE MODE WHEN APPROPRIATE CUTTING CONDITIONS AND TOOL GEOMETRY WERE USED. THE OBSERVATION OF THE MATERIAL REMOVED CAN PROVIDE INTERESTING INSIGHTS ON THE CHIP FORMATION MECHANISM AND SURFACE GENERATION PROCESS. SINGLE CRYSTAL (100) ORIENTED SILICON WAS DIAMOND TURNED AT DIFFERENT CUTTING CONDITIONS (FEED RATE AND DEPTH OF CUT). A FRESH DIAMOND TOOL WITH 0.77 MM NOSE RADIUS AND 0° / 12° RAKE/CLEARANCE ANGLES WAS USED IN THE MICROMACHINING TESTS. THE MORPHOLOGY AND TOPOGRAPHY OF THE CHIPS REMOVED IN THE DUCTILE MODE ARE SIMILAR TO CHIPS OBSERVED WITH NON-FERROUS METALS. SURFACE FEATURES OF DIAMOND TURNED SURFACES ARE QUALITATIVELY ANALYZED THROUGH SCANNING ELECTRON MICROSCOPE. THE SURFACE ROUGHNESS OF THE SURFACE MACHINED IN THE DUCTILE MODE ARE SMALLER THAN 11 NM RA. THE DUCTILE REGIME IN THE MACHINING OF SEMICONDUCTOR CRYSTALS IS INTERPRETED IN TERMS OF THE PRESSURE/STRESS-INDUCED PHASE TRANSFORMATION GENERATED BY THE CUTTING TOOL TIP/EDGE FROM SILICON CRYSTAL (SI-I) TO A METALLIC PHASE (SI-II) DURING CUTTING AND AMORPHOUS SILICON (SI-III) AFTER CUTTING.
KEYWORDS: DIAMOND TURNING, DUCTILE REGIME, SILICON |
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Autores :
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Duduch, Jaime Gilberto
Jasinevicius, Renato Goulart
Porto, Arthur José Vieira
Silva, Helder Augustus Treviso
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Trabalho Completo :
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